SI1315DL-T1-GE3
Quantity available
2 999
Shipping available
ready to ship
Location
US
Brand
Vishay Siliconix
Mpn
SI1315DL-T1-GE3
Description
MOSFET P-CH 8V 0.9A SC70-3 / Trans MOSFET P-CH 8V
Technical specification: SI1315DL-T1-GE3
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Case/Package
SOT-323
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
124.596154 mg
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2011-06-10
Lifecycle Status
Obsolete (Last Updated: 7 months ago)
LTB Date
2018-09-14
LTD Date
2019-03-14
Continuous Drain Current (ID)
900 mA
Drain to Source Breakdown Voltage
-8 V
Drain to Source Resistance
336 mΩ
Drain to Source Voltage (Vdss)
8 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
112 pF
Max Operating Temperature
150 °C
Max Power Dissipation
400 mW
Min Breakdown Voltage
8 V
Min Operating Temperature
-50 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
300 mW
Rds On Max
336 mΩ
Resistance
336 mΩ
Rise Time
15 ns
Threshold Voltage
-400 mV
Turn-Off Delay Time
14 ns
Turn-On Delay Time
10 ns
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