OPB821S3Z
Quantity available
195
Shipping available
ready to ship
Location
AT
Brand
TT Electronics
Mpn
OPB821S3Z
Datasheet
Description
Optical Switches, Transmissive, Phototransistor Output Slotted Opt Switch
Technical specification: OPB821S3Z
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Mount
Chassis Mount, Screw
Number of Pins
4
Country of Origin
Mexico
Introduction Date
1996-07-01
Lifecycle Status
Production (Last Updated: 3 months ago)
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage (VCEO)
30 V
Dark Current
100 nA
Forward Current
50 mA
Max Breakdown Voltage
30 V
Max Operating Temperature
85 °C
Min Operating Temperature
-40 °C
Number of Circuits
1
Number of Elements
1
Output Configuration
Phototransistor
Packaging
Bulk
Power Dissipation
100 mW
Reverse Breakdown Voltage
2 V
Sensing Distance
2.032 mm
Touchscreen
Infrared (IR)
Wavelength
890 nm
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