RB751S40T5G
Quantity available
2 548
Shipping available
ready to ship
Location
US
Brand
onsemi
Mpn
RB751S40T5G
Description
30 Ma, 30 V, Schottky Barrier Diode Automotive
Technical specification: RB751S40T5G
China RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
Unaffected
RoHS
Compliant
Height
700 µm
Mount
Surface Mount
Number of Terminals
2
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.70
Introduction Date
2014-10-02
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Average Rectified Current
30 mA
Capacitance
2 pF
Element Configuration
Single
Forward Current
30 mA
Forward Voltage
370 mV
Max Forward Surge Current (Ifsm)
500 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Output Current
30 mA
Max Power Dissipation
200 mW
Max Repetitive Reverse Voltage (Vrrm)
40 V
Max Reverse Voltage (DC)
40 V
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Peak Reverse Current
300 nA
Reverse Standoff Voltage
40 V
Reverse Voltage
30 V
Reverse Voltage (DC)
30 V
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