NTJD4105CT1G
Quantity available
116
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
NTJD4105CT1G
Datasheet
Description
NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Dual Complementary SC-88/SC70-6/SOT-363
Technical specification: NTJD4105CT1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Case/Package
SOT-363-6
Number of Pins
6
Number of Terminals
6
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Continuous Drain Current (ID)
630 mA
Current Rating
630 mA
Drain to Source Breakdown Voltage
-8 V
Drain to Source Resistance
375 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Dual
Fall Time
36 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
46 pF
Max Operating Temperature
150 °C
Max Power Dissipation
550 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
920 mV
Number of Elements
2
Packaging
Tape and Reel
Rds On Max
375 mΩ
Resistance
220 mΩ
Rise Time
23 ns
Threshold Voltage
920 mV
Turn-Off Delay Time
50 ns
Turn-On Delay Time
83 ns
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