NTGD4167CT1G
Quantity available
3 000
Shipping available
ready to ship
Location
US
Brand
onsemi
Mpn
NTGD4167CT1G
Description
Dual MOSFET, Complementary N and P Channel, 30 V,
Technical specification: NTGD4167CT1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1 mm
Length
3.1 mm
Width
1.7 mm
Case/Package
TSOP
Number of Pins
6
Number of Terminals
6
Country of Origin
Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2008-04-03
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Continuous Drain Current (ID)
2.6 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
90 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Fall Time
8 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
295 pF
Max Operating Temperature
150 °C
Max Power Dissipation
900 mW
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
1.1 W
Rds On Max
90 mΩ
Resistance
90 MΩ
Rise Time
8 ns
Threshold Voltage
900 mV
Turn-Off Delay Time
22 ns
Turn-On Delay Time
8 ns
Other components by onsemi
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD