FDC6561AN
Quantity available
6 450
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
FDC6561AN
Description
MOSFET 2N-CH 30V 2.5A SSOT6
Technical specification: FDC6561AN
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
3 mm
Width
1.7 mm
Case/Package
SOT-23-6
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Country of Origin
Philippines
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1999-02-01
Lifecycle Status
Production (Last Updated: 5 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Continuous Drain Current (ID)
2.5 A
Current
24 A
Current Rating
2.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
95 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Dual
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
220 pF
Max Operating Temperature
150 °C
Max Power Dissipation
960 mW
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.8 V
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
960 mW
Rds On Max
95 mΩ
Resistance
95 mΩ
Rise Time
10 ns
Turn-Off Delay Time
12 ns
Turn-On Delay Time
6 ns
Voltage
30 V
Voltage Rating (DC)
30 V
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