2SB1204S-TL-E
Quantity available
1 454
Shipping available
ready to ship
Location
AT
Brand
onsemi
Mpn
2SB1204S-TL-E
Datasheet
Description
Bipolar (BJT) Transistor PNP 50 V 8 A 130MHz 1 W Surface Mount TP-FA
Technical specification: 2SB1204S-TL-E
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Height
2.3 mm
Length
6.5 mm
Width
5.5 mm
Case/Package
DPAK
Contact Plating
Tin Bismuth
Number of Pins
3
Number of Terminals
2
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2012-06-05
Lifecycle Status
Production (Last Updated: 5 years ago)
LTB Date
2021-10-05
LTD Date
2022-07-05
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 years ago)
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
-500 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
hFE Min
140
Max Breakdown Voltage
50 V
Max Collector Current
8 A
Max Frequency
130 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
20 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1 W
Transition Frequency
130 MHz
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