SI4953ADY-T1-E3
Quantity available
1 498
Shipping available
ready to ship
Location
US
Brand
Vishay
Mpn
SI4953ADY-T1-E3
Datasheet
Description
Trans Mosfet P-ch 30V 3.7A 8-PIN SOIC N T/r / Mosfet 2P-CH 30V 3.7A 8-SOIC
Technical specification: SI4953ADY-T1-E3
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.55 mm
Length
5 mm
Width
4 mm
Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2000-02-08
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
Continuous Drain Current (ID)
3.7 A
Current
37 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
53 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Dual
Fall Time
20 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
-1 V
Number of Elements
2
Power Dissipation
2 W
Rds On Max
53 mΩ
Resistance
53 mΩ
Rise Time
10 ns
Threshold Voltage
-1 V
Turn-Off Delay Time
40 ns
Turn-On Delay Time
7 ns
Voltage
30 V
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