VND7NV04TR-E
Quantity available
5 000
Shipping available
ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
VND7NV04TR-E
Datasheet
Description
VND7NV04 Single Low Side Autoprotected 40 V 6 A 60 mOhm Power MOSFET - TO-252-3
Technical specification: VND7NV04TR-E
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
2.4 mm
Height - Seated (Max)
2.63 mm
Length
6.5 mm
Terminal Pitch
2.25 mm
Width
6.1 mm
Case/Package
SOP
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Production (Last Updated: 7 months ago)
Continuous Drain Current (ID)
6 A
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
45 V
Fall Time
350 ns
Max Operating Temperature
150 °C
Max Output Current
9 A
Max Power Dissipation
60 W
Max Supply Voltage
55 V
Manufacturer Package Identifier
TO-252-P032P
Min Operating Temperature
-40 °C
Min Supply Voltage
40 V
Nominal Supply Current
100 µA
Nominal Vgs
500 mV
Number of Channels
1
Number of Circuits
1
Number of Outputs
1
On-State Resistance
60 mΩ
Output Current
-10.5 A
Output Voltage
45 V
Packaging
Cut Tape (CT)
Power Dissipation
60 W
Resistance
60 mΩ
Rise Time
470 ns
Threshold Voltage
500 mV
Turn-Off Delay Time
500 ns
Turn-On Delay Time
100 ns
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