STD1NB80T4
Quantity available
482
Shipping available
ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STD1NB80T4
Description
Trans MOSFET N-CH 800V 1A
Technical specification: STD1NB80T4
China RoHS
Non-Compliant
REACH SVHC
Affected
RoHS
Compliant
Case/Package
TO-252
Mount
Surface Mount
Number of Terminals
2
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1998-09-01
Lifecycle Status
Obsolete (Last Updated: 3 months ago)
LTB Date
2005-12-27
Continuous Drain Current (ID)
1 A
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
20 Ω
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
50 W
Min Breakdown Voltage
800 V
Min Operating Temperature
-65 °C
Number of Elements
1
Power Dissipation
50 W
Rise Time
10 ns
Other components by STMicroelectronics
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD