STD13NM60N
Quantity available
730
Shipping available
ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STD13NM60N
Datasheet
Description
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
Technical specification: STD13NM60N
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
2.63 mm
Length
6.6 mm
Width
6.2 mm
Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2009-02-23
Lifecycle Status
EOL (Last Updated: 1 month ago)
LTB Date
2026-09-10
LTD Date
2027-03-10
Continuous Drain Current (ID)
11 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
360 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
790 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
90 W
Min Breakdown Voltage
600 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
90 W
Rds On Max
360 mΩ
Resistance
360 mΩ
Rise Time
8 ns
Threshold Voltage
3 V
Turn-Off Delay Time
30 ns
Turn-On Delay Time
3 ns
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