STD10NM60N
Quantity available
750
Shipping available
ready to ship
Location
AT
Brand
STMicroelectronics
Mpn
STD10NM60N
Datasheet
Description
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package
Technical specification: STD10NM60N
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Height
2.4 mm
Length
6.6 mm
Width
6.2 mm
Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Production (Last Updated: 5 months ago)
Continuous Drain Current (ID)
8 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
550 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
540 pF
Max Operating Temperature
150 °C
Max Power Dissipation
70 W
Min Breakdown Voltage
600 V
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
70 W
Rds On Max
550 mΩ
Resistance
600 mΩ
Rise Time
12 ns
Threshold Voltage
3 V
Turn-Off Delay Time
32 ns
Turn-On Delay Time
10 ns
Other components by STMicroelectronics
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD