PUMD12
Quantity available
2 805
Shipping available
ready to ship
Location
AT
Brand
NXP Semiconductors
Mpn
PUMD12
Datasheet
Description
PUMD12 - NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
Technical specification: PUMD12
China RoHS
Compliant
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Country of Origin
Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.21.00.95
Introduction Date
1999-04-26
Lifecycle Status
Production (Last Updated: 8 months ago)
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
150 mV
Collector Emitter Voltage (VCEO)
50 V
Current
1 A
Emitter Base Voltage (VEBO)
10 V
hFE Min
80
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Packaging
Cut Tape
Polarity
NPN, PNP
Power Dissipation
200 mW
Voltage
50 V
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