PESD5V0S1BB
Quantity available
3 000
Shipping available
ready to ship
Location
US
Brand
NXP Semiconductors
Mpn
PESD5V0S1BB
Description
LOW CAPACITANCE BIDIRECTIONAL ESD PROTECTION DIODE
Technical specification: PESD5V0S1BB
China RoHS
Compliant
REACH SVHC
Yes
RoHS
Compliant
Height
650 µm
Contact Plating
Tin
Number of Pins
2
Number of Terminals
2
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Introduction Date
2004-02-16
Lifecycle Status
Production (Last Updated: 4 days ago)
Ambient Temperature Range High
150 °C
Breakdown Voltage
7.5 V
Capacitance
35 pF
Clamping Voltage
14 V
Direction
Bidirectional
Max Breakdown Voltage
9.5 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Breakdown Voltage
5.5 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5 V
Packaging
Cut Tape
Peak Pulse Current
12 A
Peak Pulse Power
130 W
Peak Reverse Current
100 nA
Polarity
Bidirectional
Reverse Standoff Voltage
5 V
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