PESD5V0L5UY
Quantity available
3 000
Shipping available
ready to ship
Location
AT
Brand
NXP Semiconductors
Mpn
PESD5V0L5UY
Datasheet
Description
PESD5V0L5UY - Low capacitance unidirectional fivefold ESD protection diode arrays
Technical specification: PESD5V0L5UY
China RoHS
Compliant
Radiation Hardening
No
Ratings
MIL-STD-883
REACH SVHC
Unaffected
RoHS
Compliant
Depth
1.35 mm
Height
1.1 mm
Length
2.2 mm
Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Introduction Date
2004-02-16
Lifecycle Status
Production (Last Updated: 8 months ago)
Ambient Temperature Range High
150 °C
Breakdown Voltage
6.8 V
Capacitance
16 pF
Clamping Voltage
10 V
Direction
Unidirectional
Leakage Current
25 nA
Max Breakdown Voltage
7.2 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Breakdown Voltage
6.4 V
Min Operating Temperature
-65 °C
Number of Channels
5
Number of Elements
5
Operating Supply Voltage
5 V
Peak Pulse Current
2.5 A
Peak Pulse Power
25 W
Peak Reverse Current
25 nA
Polarity
Unidirectional
Reverse Breakdown Voltage
6.4 V
Reverse Standoff Voltage
5 V
Test Current
1 mA
Working Voltage
5 V
Other components by NXP Semiconductors
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD