BC857C
Quantity available
5 997
Shipping available
ready to ship
Location
AT
Brand
NXP Semiconductors
Mpn
BC857C
Datasheet
Description
Bipolar junction transistor, PNP, -100 mA, -45 ## Fehler ##, SMD, SOT-23, BC857C, 215
Technical specification: BC857C
China RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
Unaffected
RoHS
Compliant
Height
1.1 mm
Case/Package
SOT-23
Contact Plating
Tin
Mount
Reverse
Number of Pins
3
Number of Terminals
3
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1987-05-05
Lifecycle Status
Production (Last Updated: 1 week ago)
LTB Date
2004-06-30
Ambient Temperature Range High
150 °C
Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
-45 V
Collector Emitter Saturation Voltage
650 mV
Collector Emitter Voltage (VCEO)
45 V
Current
1 A
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
100 MHz
hFE Min
420
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
250 mW
Transition Frequency
100 MHz
Voltage
45 V
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