NAND128W3A2BN6F
Quantity available
434
Shipping available
ready to ship
Location
AT
Brand
Micron
Mpn
NAND128W3A2BN6F
Description
FLASH - NAND Memory IC 128Mb (16M x 8)
Technical specification: NAND128W3A2BN6F
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Width
12 mm
Height - Seated (Max)
1.2 mm
Length
18.4 mm
Terminal Pitch
500 µm
Case/Package
TSSOP
Mount
Surface Mount
Number of Pins
48
Number of Terminals
48
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8542.32.00.51
Introduction Date
2008-08-13
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
LTB Date
2017-07-01
LTD Date
2017-12-30
Word Size
8 b
Access Time
35 ns
Address Bus Width
24 b
Density
128 Mb
Max Operating Temperature
85 °C
Max Supply Current
20 mA
Max Supply Voltage
3.6 V
Memory Type
FLASH
Min Operating Temperature
-40 °C
Min Supply Voltage
2.7 V
Nominal Supply Current
20 mA
Nominal Supply Voltage (DC)
3 V
Number of Circuits
1
Number of Words
1.6777216e+07
Packaging
Tape & Reel (TR)
Sync/Async
Asynchronous
Temperature Grade
Industrial
Voltage
3 V
Voltage Rating (DC)
3 V
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