IRLR8726TRPBF
Quantity available
13 915
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IRLR8726TRPBF
Datasheet
Description
Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
Technical specification: IRLR8726TRPBF
China RoHS
Non-Compliant
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Height
2.52 mm
Length
6.7056 mm
Width
6.22 mm
Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2008-12-16
Lifecycle Status
Production (Last Updated: 8 months ago)
Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
5.8 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.15 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
75 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
5.8 mΩ
Package Quantity
2000
Packaging
Tape & Reel
Power Dissipation
75 W
Rds On Max
5.8 mΩ
Rise Time
49 ns
Turn-Off Delay Time
15 ns
Turn-On Delay Time
12 ns
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