IRLML2030TRPBF
Quantity available
5 088
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IRLML2030TRPBF
Datasheet
Description
Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55+150 deg.C, SMD, SOT23
Technical specification: IRLML2030TRPBF
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1.12 mm
Length
3.0226 mm
Width
1.397 mm
Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.29.00.95
Introduction Date
2009-11-04
Lifecycle Status
Production (Last Updated: 4 months ago)
Continuous Drain Current (ID)
2.2 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
110 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.3 W
Manufacturer Package Identifier
Micro3
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.7 V
Number of Channels
1
Number of Elements
1
On-State Resistance
100 mΩ
Package Quantity
3000
Packaging
Tape & Reel
Power Dissipation
1.3 W
Rds On Max
100 mΩ
Recovery Time
14 ns
Resistance
100 MΩ
Rise Time
3.3 ns
Threshold Voltage
1.7 V
Turn-Off Delay Time
4.5 ns
Turn-On Delay Time
4.1 ns
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