IRFBA90N20DPBF
Quantity available
116
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IRFBA90N20DPBF
Datasheet
Description
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
Technical specification: IRFBA90N20DPBF
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
20.5 mm
Length
10.9982 mm
Width
5 mm
Mount
Through Hole
Number of Pins
3
Number of Terminals
3
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2001-09-06
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
LTB Date
2012-12-28
LTD Date
2013-06-28
Continuous Drain Current (ID)
95 A
Current Rating
98 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
23 mΩ
Drain to Source Voltage (Vdss)
200 V
Dual Supply Voltage
200 V
Element Configuration
Single
Fall Time
77 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
6.08 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
650 W
Min Breakdown Voltage
200 V
Min Operating Temperature
-55 °C
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
On-State Resistance
23 mΩ
Package Quantity
50
Packaging
Bulk
Power Dissipation
650 W
Rds On Max
23 mΩ
Resistance
23 Ω
Rise Time
160 ns
Threshold Voltage
5 V
Turn-Off Delay Time
39 ns
Turn-On Delay Time
23 ns
Voltage Rating (DC)
200 V
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