IRF9Z24NPbF
Quantity available
1 500
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IRF9Z24NPbF
Description
Trans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB
Technical specification: IRF9Z24NPbF
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
19.8 mm
Lead Pitch
2.54 mm
Length
10.5156 mm
Width
4.69 mm
Case/Package
TO-220
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Number of Terminals
3
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.29.00.95
Introduction Date
1996-08-05
Lifecycle Status
Production (Last Updated: 3 months ago)
LTB Date
2012-12-28
LTD Date
2013-06-28
Continuous Drain Current (ID)
12 A
Current Rating
-12 A
Drain to Source Breakdown Voltage
-55 V
Drain to Source Resistance
175 mΩ
Drain to Source Voltage (Vdss)
-55 V
Dual Supply Voltage
-55 V
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
350 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
45 W
Min Breakdown Voltage
55 V
Min Operating Temperature
-55 °C
Nominal Vgs
-4 V
Number of Channels
1
Number of Elements
1
On-State Resistance
175 mΩ
Package Quantity
1000
Packaging
Bulk
Power Dissipation
45 W
Rds On Max
175 mΩ
Recovery Time
71 ns
Resistance
175 mΩ
Rise Time
55 ns
Termination
Through Hole
Threshold Voltage
-4 V
Turn-Off Delay Time
23 ns
Turn-On Delay Time
13 ns
Voltage Rating (DC)
-55 V
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