IRF5851TRPBF
Quantity available
342
Shipping available
ready to ship
Location
US
Brand
Infineon
Mpn
IRF5851TRPBF
Description
MOSFET N/P-CH 20V 2.7A 6-TSOP
Technical specification: IRF5851TRPBF
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1.1 mm
Length
3 mm
Width
1.5 mm
Case/Package
TSOP
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2002-09-02
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
LTB Date
2012-01-08
LTD Date
2012-07-08
Continuous Drain Current (ID)
2.7 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
90 mΩ
Drain to Source Voltage (Vdss)
20 V
Dual Supply Voltage
20 V
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
400 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
960 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.25 V
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
960 mW
Rds On Max
90 mΩ
Resistance
90 mΩ
Termination
SMD/SMT
Threshold Voltage
1.25 V
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