IPT020N10N5
Quantity available
4 860
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IPT020N10N5
Description
Power Transistor MOSFET N-Channel Enhancement 100V
Technical specification: IPT020N10N5
China RoHS
Non-Compliant
REACH SVHC
No
RoHS
Compliant
Height
2.4 mm
Number of Terminals
8
Lifecycle Status
Production (Last Updated: 3 months ago)
Min Operating Temperature
-55 °C
Continuous Drain Current (ID)
31 A
Drain to Source Breakdown Voltage
100 V
Max Operating Temperature
175 °C
Manufacturer Package Identifier
PG-HSOF-8
Number of Channels
1
Drain to Source Resistance
2 mΩ
Drain to Source Voltage (Vdss)
100 V
Max Junction Temperature (Tj)
175 °C
Min Breakdown Voltage
100 V
Turn-Off Delay Time
49 ns
Turn-On Delay Time
20 ns
Gate to Source Voltage (Vgs)
20 V
Number of Elements
1
Power Dissipation
273 W
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