IPD5N25S3430ATMA1
Quantity available
1 172
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
IPD5N25S3430ATMA1
Description
250V, N-Ch, 430 mΩ max, Automotive MOSFET
Technical specification: IPD5N25S3430ATMA1
China RoHS
Non-Compliant
Halogen Free
Halogen Free
Lead Free
Contains Lead
Ratings
AEC-Q101
REACH SVHC
No
RoHS
Compliant
Case/Package
TO-252-3
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Country of Origin
Germany, Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2011-01-20
Lifecycle Status
Production (Last Updated: 3 months ago)
Continuous Drain Current (ID)
5 A
Drain to Source Resistance
430 mΩ
Drain to Source Voltage (Vdss)
250 V
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
422 pF
Max Dual Supply Voltage
250 V
Max Operating Temperature
175 °C
Max Power Dissipation
41 W
Min Breakdown Voltage
250 V
Min Operating Temperature
-55 °C
Number of Elements
1
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
41 W
Rds On Max
430 mΩ
Rise Time
2 ns
Turn-Off Delay Time
8 ns
Turn-On Delay Time
3 ns
Other components by Infineon
Our web-platform supports OEM and EMS companies in selling their excess stock globally, while offering best prices and quality to prospective buyers.
AT/USDMarketplace
Marketplace
Support
Support
Sustainability
Sustainability
AT/USD