IPB029N06N3G
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Brand
Infineon
Mpn
IPB029N06N3G
Datasheet
Description
Single N-Channel 60 V 2.9 mOhm 124 nC OptiMOS Power Mosfet - D2PAK
Technical specification: IPB029N06N3G
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
No SVHC
Fall Time
20 ns
Packaging
Digi-Reel®
Rise Time
120 ns
Package Quantity
1000
Input Capacitance
10 nF
Power Dissipation
188 W
Threshold Voltage
3 V
Number of Elements
1
Turn-On Delay Time
35 ns
On-State Resistance
3.2 mΩ
Turn-Off Delay Time
62 ns
Max Power Dissipation
188 W
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
2.3 mΩ
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
120 A
Drain to Source Voltage (Vdss)
60 V
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