IAUT260N10S5N019 ATMA1
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66
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ready to ship
Location
AT
Brand
Infineon
Mpn
IAUT260N10S5N019 ATMA1
Datasheet
Description
IAUT260Nxx Series 100 V 1.9 mOhm 260 A OptiMOS-5 Power-Transistor-PG-HSOF-8-1
Technical specification: IAUT260N10S5N019 ATMA1
China RoHS
Non-Compliant
Ratings
AEC-Q101
REACH SVHC
Affected
RoHS
Compliant
Height
2.4 mm
Number of Terminals
8
Country of Origin
Germany, Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2017-10-02
Lifecycle Status
Production (Last Updated: 4 months ago)
Continuous Drain Current (ID)
260 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
1.9 mΩ
Drain to Source Voltage (Vdss)
100 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
300 W
Manufacturer Package Identifier
PG-HSOF-8
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape & Reel
Power Dissipation
300 W
Turn-Off Delay Time
49 ns
Turn-On Delay Time
21 ns
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