BSP135 L6327
Quantity available
700
Shipping available
ready to ship
Location
AT
Brand
Infineon
Mpn
BSP135 L6327
Datasheet
Description
MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity: N Channel; Continuous Dr
Technical specification: BSP135 L6327
China RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
Unaffected
RoHS
Compliant
Case/Package
SOT-223-4
Mount
Surface Mount
Number of Pins
4
Number of Terminals
4
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.29.00.95
Introduction Date
1996-09-01
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
LTB Date
2013-05-15
LTD Date
2013-11-15
Continuous Drain Current (ID)
120 mA
Current
12 A
Current Rating
1.1 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
45 Ω
Drain to Source Voltage (Vdss)
600 V
Fall Time
5.6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
146 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Breakdown Voltage
600 V
Min Operating Temperature
-55 °C
Nominal Vgs
-1.4 V
Number of Elements
1
Power Dissipation
1.8 W
Rds On Max
45 Ω
Rise Time
5.6 ns
Turn-Off Delay Time
28 ns
Turn-On Delay Time
5.4 ns
Voltage
600 V
Voltage Rating (DC)
100 V
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