FDY1002PZ
Quantity available
1 486
Shipping available
ready to ship
Location
AT
Brand
Fairchild Semiconductor
Mpn
FDY1002PZ
Description
MOSFET 2P-CH 20V 830MA SOT563F
Technical specification: FDY1002PZ
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
700 µm
Length
1.7 mm
Width
1.2 mm
Case/Package
SOT-563
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
32 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
-830 mA
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
1.8 Ω
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Dual
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
135 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Breakdown Voltage
-20 V
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
446 mW
Rds On Max
500 mΩ
Resistance
500 mΩ
Rise Time
2.9 ns
Turn-Off Delay Time
23 ns
Turn-On Delay Time
3.5 ns
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