FDG6304P
Quantity available
2 185
Shipping available
ready to ship
Location
US
Brand
Fairchild Semiconductor
Mpn
FDG6304P
Datasheet
Description
Trans MOSFET P-CH 25V 0.41A
Technical specification: FDG6304P
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.1 mm
Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
28 mg
Country of Origin
Philippines
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1999-02-01
Lifecycle Status
EOL (Last Updated: 2 days ago)
Manufacturer Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Continuous Drain Current (ID)
410 mA
Current Rating
-410 mA
Drain to Source Breakdown Voltage
-25 V
Drain to Source Resistance
1.1 Ω
Drain to Source Voltage (Vdss)
-25 V
Dual Supply Voltage
-25 V
Element Configuration
Dual
Fall Time
8 ns
Gate to Source Voltage (Vgs)
-8 V
Input Capacitance
62 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Breakdown Voltage
25 V
Min Operating Temperature
-55 °C
Nominal Vgs
-820 mV
Number of Channels
2
Number of Elements
2
Power Dissipation
300 mW
Rds On Max
1.1 Ω
Resistance
1.1 Ω
Rise Time
8 ns
Termination
SMD/SMT
Threshold Voltage
-820 mV
Turn-Off Delay Time
55 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
-25 V
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