MMDT5451-7-F
Quantity available
360
Shipping available
ready to ship
Location
AT
Brand
Diodes Inc.
Mpn
MMDT5451-7-F
Datasheet
Description
MMDT5451 Series NPN/PNP 160 V 200 mW Small Signal Transistor SMT - SOT-363
Technical specification: MMDT5451-7-F
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Case/Package
SOT-363
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
6.010099 mg
Lifecycle Status
Production (Last Updated: 8 months ago)
Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
150 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
160 V
Continuous Collector Current
-200 mA
Current Rating
200 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
30
Max Breakdown Voltage
150 V
Max Collector Current
200 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Cut Tape
Polarity
NPN, PNP
Power Dissipation
200 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
160 V
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