FDG6303N
Verfügbare Menge
322
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fertig zum Versand
Standort
AT
Marke
onsemi
Mpn
FDG6303N
Beschreibung
Dual-MOSFET, n-Kanal, 25 V, 500 mA, 0.34 ohm
Technische Daten: FDG6303N
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1 mm
Length
2 mm
Width
1.25 mm
Weight
28 mg
Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1999-02-01
Lifecycle Status
EOL (Last Updated: 3 days ago)
LTB Date
2025-04-18
LTD Date
2025-10-18
Manufacturer Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Continuous Drain Current (ID)
500 mA
Current Rating
500 mA
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
450 mΩ
Drain to Source Voltage (Vdss)
25 V
Dual Supply Voltage
25 V
Element Configuration
Dual
Fall Time
8.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
50 pF
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Breakdown Voltage
25 V
Min Operating Temperature
-55 °C
Nominal Vgs
800 mV
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
300 mW
Rds On Max
450 mΩ
Resistance
450 mΩ
Rise Time
8.5 ns
Termination
SMD/SMT
Threshold Voltage
800 mV
Turn-Off Delay Time
17 ns
Turn-On Delay Time
3 ns
Voltage Rating (DC)
25 V
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