PMDPB70XP,115
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PMDPB70XP,115
Beschreibung
Transistor MOSFET Array Dual P-CH 30V 3.8A 8-Pin H
Technische Daten: PMDPB70XP,115
China RoHS
Compliant
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Case/Package
SOT
Contact Plating
Tin
Number of Pins
6
Number of Terminals
6
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2012-03-12
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Continuous Drain Current (ID)
2.9 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
87 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Dual
Fall Time
48 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
680 pF
Max Dual Supply Voltage
-30 V
Max Operating Temperature
150 °C
Max Power Dissipation
8.3 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Digi-Reel®
Power Dissipation
1.17 W
Rds On Max
87 mΩ
Rise Time
15 ns
Turn-Off Delay Time
112 ns
Turn-On Delay Time
3 ns
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