1EDI30J12CP
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Infineon
Mpn
1EDI30J12CP
Datenblatt
Beschreibung
1200 V single high-side JFET gate driver IC with galvanic isolation and enable, PG-DSO-19, RoHS
Technische Daten: 1EDI30J12CP
China RoHS
Compliant
Halogen Free
Halogen Free
Lead Free
Lead Free
REACH SVHC
Unaffected
RoHS
Compliant
Height - Seated (Max)
2.65 mm
Length
12.8 mm
Terminal Pitch
1.27 mm
Width
7.5 mm
Case/Package
SOP
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
19
Number of Terminals
19
Lifecycle Status
Obsolete (Last Updated: 5 months ago)
Channel Type
Synchronous
Element Configuration
Single
Fall Time
22 ns
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Output Current
4 A
Max Power Dissipation
1 W
Max Supply Current
1.6 mA
Max Supply Voltage
17.5 V
Min Operating Temperature
-40 °C
Min Supply Voltage
4.75 V
Nominal Supply Voltage (DC)
5 V
Number of Channels
1
Number of Circuits
1
Number of Drivers
1
Number of Outputs
1
Operating Supply Current
1.2 mA
Output Current
2 mA
Output Voltage
-18.25 V
Package Quantity
1000
Packaging
Tape & Reel
Propagation Delay
106 ns
Rise Time
23 ns
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